unidirection solidification of multicrystalline silicon under

Newly developed multicrystalline silicon wafer with

In this paper, we improved the quality of the silicon wafers which was important in the improvement in conversion efficiency of the photovoltaic system using multicrystalline silicon. Crystal grains were observed in the cross section of the multicrystalline silicon ingots obtained by the conventional casting method and the MUST (MUlti-STage solidification controlling) method. The wafer

Preparation and microstructural characteristics of solar

Solar-grade multicrystalline silicon ingots as raw material for solar cells were obtained from upgraded metallurgical silicon by directional solidification in an axial magnetic field. 5. Y. Tan, S.Q. Ren, S. Shi, S.T. Wen, D.C. Jiang, W. Dong, M. Ji, and S.H. Sun: Removal of aluminum and calcium in multicrystalline silicon by vacuum induction melting and directional solidification.

Polycrystalline silicon

Polycrystalline silicon, or multicrystalline silicon, also called polysilicon or poly-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry. Polysilicon is produced from metallurgical grade silicon by a chemical purification process, called the Siemens process.

Silicon purification through acid leaching and

Recently the shortage of silicon resources especially for poly-silicon of purity higher than 99.9999 % leads to search for the more cheap and quick synthesizing routes for silicon feedstock. In order to solve this situation, we investigated the purification process of metallurgical grade (MG) silicon of purity around 99 % by the acid leaching and following the unidirectional solidification.

Growth and Characterization of Multicrystalline Silicon

In order to produce high-quality multicrystalline(mc-) silicon ingots, mc-Si ingots were grown by the directional solidification technique with various heater transfer rate, VsubH/sub=15, 30, 60mm/hr . The grown ingots were sliced to a thickness of 0

Removal of Cu, Mn and Na in multicrystalline silicon by

2015/5/1A multicrystalline silicon ingot was obtained from metallurgical-grade silicon after directional solidification under low vacuum condition. The concentration distributions of metal impurities such as copper (Cu), manganese (Mn) and sodium (Na) along the

Fracture of Directionally Solidified Multicrystalline Silicon

Fracture toughness data is given for multicrystalline silicon which has been prepared by directional solidification. Results indicated a K IC of 0.8 to 0.87 MN /m 3/2, which is consistent with data for single‐crystal silicon.

Liquinert quartz crucible for the growth of multicrystalline

Multicrystalline Si (mc‐Si) ingots for solar cell applications are produced by casting based on unidirectional solidification. It has been demanded to reduce the defects, such as impurities, dislocations, sub‐grain boundaries, and grain boundaries, to improve the efficiency of mc‐Si solar cells.

Thermodynamical analysis of oxygen incorporation from a

2008/11/1We proposed an oxygen transport model in which the reaction between a liner made of Si 3 N 4 and a crucible made of SiO 2 was taken into account to study the mechanism of oxygen incorporation in multicrystalline silicon for a solar cell grown by the unidirectional solidification method.

High quality multicrystalline silicon grown by multi

High quality multicrystalline silicon grown by multi-stage solidification control method - Volume 27 Issue 1-3 - S. Nara, T. Sekiguchi, J. Chen We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this

Multi

2015/5/1Silicon solidification experiments and numerical simulations. • Forced convection was induced by a TMF with different orientations. • Experimental solid–liquid interface markings. • Liquid velocity and flow patterns analysed in liquid metal. • Growth rate computed

Computational Study of Contact Solidification for

Ribbon growth on substrate (RGS) has emerged as a new method for growing silicon films at low cost for photovoltaic applications by contact solidification. Thermal conditions play an important role in determining the thickness and quality of the as-grown films. In

Directional Solidification of Multicrystalline Silicon

Employing the accelerated crucible rotation technique, we grew multicrystalline silicon by the directional solidification process. The distribution of carbon concentration determined by Fourier transform infrared spectroscopy demonstrated that application of accelerated crucible rotation homogenized the carbon concentration in the grown ingot. Attempts were made to explain the effect of

Effect of conditions of unidirectional solidification on

Aluminum and Al-Mg-Si alloy ingots with pores were fabricated by unidirectional solidification through thermal decomposition of Ca(OH) 2 powders. The porosity of aluminum and Al-Mg-Si alloy were 10-17% and 0.1-2%, respectively. While the pores with 250-400 μm

Birgit Ryningen

Multicrystalline silicon is widely used in solar cell production. The standard process applied by the industry is directional solidification in Si3N4-coated quartz crucibles, but little attention has been given to the coating and its impact on material quality. In this study

Silicon purification through acid leaching and

Recently the shortage of silicon resources especially for poly-silicon of purity higher than 99.9999 % leads to search for the more cheap and quick synthesizing routes for silicon feedstock. In order to solve this situation, we investigated the purification process of metallurgical grade (MG) silicon of purity around 99 % by the acid leaching and following the unidirectional solidification. MG

METALLIC SILICON AND METHOD FOR MANUFACTURING

Metallic silicon of the present invention is manufactured by refining molten crude metallic silicon by unidirectional solidification. The metallic silicon has a purity of 3N (99.9%) or more to 6N (99.9999%) or less and an average crystal grain diameter of 1 mm or

Development of high‐performance multicrystalline silicon

The low cost and high quality of multicrystalline silicon (mc‐Si) based on directional solidification has become the main stream in photovoltaic (PV) industry. The mc‐Si quality affects directly the conversion efficiency of solar cells, and thus, it is crucial to the cost of PV electricity.

Directional solidification

Directional solidification (DS) and progressive solidification are types of solidification within castings.Directional solidification is solidification that occurs from farthest end of the casting and works its way towards the sprue.Progressive solidification, also known as parallel solidification, is solidification that starts at the walls of the casting and progresses perpendicularly from

(PDF) A 19.8% efficient honeycomb multicrystalline

Our previous experiments have produced 18.2% efficient multicrystalline PERL type cells with a planar front surface under similar processing conditions [3]. It is believed that the quality of multicrystalline silicon substrates has also been recently improved. These

(PDF) A 19.8% efficient honeycomb multicrystalline

Our previous experiments have produced 18.2% efficient multicrystalline PERL type cells with a planar front surface under similar processing conditions [3]. It is believed that the quality of multicrystalline silicon substrates has also been recently improved. These

Numerical Investigation of the Influence of Material

We carried out calculations to investigate the influence of thermal conductivity of the wall of a crucible on melt−crystal interface shape using three-dimensional global analyses. It was found that thermal conductivity of the wall of a crucible has significant influence on the melt−crystal interface shape due to modification of the amount of outgoing heat flux through the wall of a

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